Технічний опис IXTR32P60P Littelfuse
Description: MOSFET P-CH 600V 18A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Інші пропозиції IXTR32P60P
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IXTR32P60P | Виробник : Littelfuse Inc. |
 Description: MOSFET P-CH 600V 18A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
товару немає в наявності |
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IXTR32P60P | Виробник : IXYS |
MOSFETs -18 Amps -600V 0.385 Rds |
товару немає в наявності |
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IXTR32P60P | Виробник : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -600V Drain current: -18A Power dissipation: 310W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 480ns Technology: PolarP™ |
товару немає в наявності |