на замовлення 450 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 923.76 грн |
| 10+ | 801.82 грн |
| 30+ | 645.29 грн |
| 60+ | 611.33 грн |
| 120+ | 570.71 грн |
| 270+ | 546.73 грн |
| 510+ | 517.43 грн |
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Технічний опис IXXH50N60C3D1 IXYS
Description: IGBT 600V 100A 600W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 24ns/62ns, Switching Energy: 720µJ (on), 330µJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.
Інші пропозиції IXXH50N60C3D1
| Фото | Назва | Виробник | Інформація |
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IXXH50N60C3D1 | Виробник : Littelfuse |
 Trans IGBT Chip N-CH 600V 100A 600000mW 3-Pin(3+Tab) TO-247AD |
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IXXH50N60C3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns кількість в упаковці: 1 шт |
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IXXH50N60C3D1 | Виробник : IXYS |
Description: IGBT 600V 100A 600W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 24ns/62ns Switching Energy: 720µJ (on), 330µJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W |
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IXXH50N60C3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 69ns Turn-off time: 170ns |
товар відсутній |