Технічний опис IXYH12N250C
Description: IGBT 2500V 28A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 16 ns, Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 12ns/167ns, Switching Energy: 3.56mJ (on), 1.7mJ (off), Test Condition: 1250V, 12A, 10Ohm, 15V, Gate Charge: 56 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 310 W.
Інші пропозиції IXYH12N250C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IXYH12N250C | IXYS |
Description: IGBT 2500V 28A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 16 ns Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 12ns/167ns Switching Energy: 3.56mJ (on), 1.7mJ (off) Test Condition: 1250V, 12A, 10Ohm, 15V Gate Charge: 56 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 80 A Power - Max: 310 W |
товару немає в наявності |
В кошику од. на суму грн. | |
| IXYH12N250C | Littelfuse |
IGBTs Disc IGBT XPT-Hi Voltage TO-247AD |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |
| IXYH12N250C | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3 Collector current: 12A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 48A Technology: XPT™ Power dissipation: 310W Collector-emitter voltage: 2.5kV Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Kind of package: tube Turn-on time: 12ns Gate charge: 56nC Turn-off time: 167ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYH12N250C |
![]() |
Виробник: IXYS
Description: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
Description: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товару немає в наявності
В кошику
од. на суму грн.
| IXYH12N250C |
![]() |
Виробник: Littelfuse
IGBTs Disc IGBT XPT-Hi Voltage TO-247AD
IGBTs Disc IGBT XPT-Hi Voltage TO-247AD
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYH12N250C |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
товару немає в наявності
В кошику
од. на суму грн.


