JAN2N2857UB Semicoa
Виробник: Semicoa
NPN, silicon, low power, encapsulated and unencapsulated, radiation hardness assurance
NPN, silicon, low power, encapsulated and unencapsulated, radiation hardness assurance
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис JAN2N2857UB Semicoa
Description: RF TRANS NPN 15V 0.04A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 21dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: UB, Part Status: Obsolete.
Інші пропозиції JAN2N2857UB
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
JAN2N2857UB | Виробник : Microsemi Corporation |
Description: RF TRANS NPN 15V 0.04A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 21dB Power - Max: 200mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Supplier Device Package: UB Part Status: Obsolete |
товар відсутній |
||
JAN2N2857UB | Виробник : Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
товар відсутній |