Технічний опис JAN2N6770T1 MICROSEMI
Description: MOSFET N-CH 500V 12A TO254AA, Qualification: MIL-PRF-19500/543, Grade: Military, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-254AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-254-3, TO-254AA (Straight Leads), Packaging: Bulk.
Інші пропозиції JAN2N6770T1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N6770T1 | Microsemi Corporation |
 Description: MOSFET N-CH 500V 12A TO254AAQualification: MIL-PRF-19500/543 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
| JAN2N6770T1 | Microchip / Microsemi |
MOSFET Power Mosfet |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN2N6770T1 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET N-CH 500V 12A TO254AA
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N6770T1 |
|
Виробник: Microchip / Microsemi
MOSFET Power Mosfet
MOSFET Power Mosfet
товару немає в наявності
В кошику
од. на суму грн.