Технічний опис JAN2N6898 HARRIS
Description: MOSFET P-CHANNEL 100V 25A TO3, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.
Інші пропозиції JAN2N6898
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JAN2N6898 | Виробник : Microsemi Corporation |
Description: MOSFET P-CHANNEL 100V 25A TO3 Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
товару немає в наявності |