Технічний опис JANTX2N6790 HARRIS
Description: MOSFET N-CH 200V 3.5A TO39, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-39, Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Qualification: MIL-PRF-19500/555.
Інші пропозиції JANTX2N6790
Фото | Назва | Виробник | Інформація |
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JANTX2N6790 | Виробник : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Qualification: MIL-PRF-19500/555 |
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