Технічний опис JANTX2N6901 HARRIS
Description: MOSFET N-CH 100V 1.69A TO205AF, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V, Power Dissipation (Max): 8.33W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-205AF (TO-39), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V.
Інші пропозиції JANTX2N6901
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANTX2N6901 | Виробник : Microchip Technology |
 Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39 |
товару немає в наявності |
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JANTX2N6901 | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 100V 1.69A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V Power Dissipation (Max): 8.33W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V |
товару немає в наявності |