Технічний опис JANTXV2N6770
Description: MOSFET N-CH 500V 12A TO204AE, Qualification: MIL-PRF-19500/543, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Military, Supplier Device Package: TO-204AE (TO-3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AE, Packaging: Bulk.
Інші пропозиції JANTXV2N6770
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N6770 | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO204AEQualification: MIL-PRF-19500/543 Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Military Supplier Device Package: TO-204AE (TO-3) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Packaging: Bulk |
товару немає в наявності |
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JANTXV2N6770 | Виробник : Infineon / IR |
MOSFET |
товару немає в наявності |
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| JANTXV2N6770 | Виробник : Microchip / Microsemi |
MOSFET |
товару немає в наявності |



