Технічний опис JANTXV2N6782 HARRIS
Description: MOSFET N-CH 100V 3.5A TO205AF, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk.
Інші пропозиції JANTXV2N6782
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N6782 | Виробник : Microsemi Corporation |
 Description: MOSFET N-CH 100V 3.5A TO205AFGate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-205AF (TO-39) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Packaging: Bulk |
товару немає в наявності |