Технічний опис JANTXV2N6796 MICROSEMI
Description: MOSFET N-CH 100V 8A TO205AF, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-205AF (TO-39), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V, Grade: Military, Qualification: MIL-PRF-19500/557.
Інші пропозиції JANTXV2N6796
| Фото | Назва | Виробник | Інформація |
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JANTXV2N6796 | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 100V 8A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/557 |
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