JANTXV2N6849 MICROSEMI
Виробник: MICROSEMI
TO-39/6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET JANTXV2N6849
кількість в упаковці: 1 шт
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Технічний опис JANTXV2N6849 MICROSEMI
Description: MOSFET P-CH 100V 6.5A TO205AF, Qualification: MIL-PRF-19500/564, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Military, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk.
Інші пропозиції JANTXV2N6849
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
JANTXV2N6849 | Microsemi Corporation |
Description: MOSFET P-CH 100V 6.5A TO205AF Qualification: MIL-PRF-19500/564 Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Military Supplier Device Package: TO-205AF (TO-39) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTXV2N6849 |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO205AF
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Description: MOSFET P-CH 100V 6.5A TO205AF
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.