JANTXV2N6849 MICROSEMI
Виробник: MICROSEMITO-39/6.5 A, 100 V, 0.345 ohm, P-CHANNEL, Si, POWER, MOSFET JANTXV2N6849
кількість в упаковці: 1 шт
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Технічний опис JANTXV2N6849 MICROSEMI
Description: MOSFET P-CH 100V 6.5A TO205AF, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-205AF (TO-39), Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Qualification: MIL-PRF-19500/564.
Інші пропозиції JANTXV2N6849
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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JANTXV2N6849 | Виробник : Microsemi Corporation |
Description: MOSFET P-CH 100V 6.5A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V Qualification: MIL-PRF-19500/564 |
товару немає в наявності |