Технічний опис JANTXV2N7236U MICROSEMI
Description: MOSFET P-CH 100V 18A TO267AB, Qualification: MIL-PRF-19500/595, Grade: Military, Mounting Type: Surface Mount, Package / Case: TO-267AB, Packaging: Bulk, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-267AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції JANTXV2N7236U
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| JANTXV2N7236U | Microsemi Corporation |
 Description: MOSFET P-CH 100V 18A TO267ABQualification: MIL-PRF-19500/595 Grade: Military Mounting Type: Surface Mount Package / Case: TO-267AB Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-267AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
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В кошику од. на суму грн. |
| JANTXV2N7236U |
|
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 100V 18A TO267AB
Qualification: MIL-PRF-19500/595
Grade: Military
Mounting Type: Surface Mount
Package / Case: TO-267AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-267AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.