Технічний опис JANTXV2N7236U Microchip Technology
Description: MOSFET P-CH 100V 18A TO267AB, Packaging: Bulk, Package / Case: TO-267AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V, Power Dissipation (Max): 4W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-267AB, Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Qualification: MIL-PRF-19500/595.
Інші пропозиції JANTXV2N7236U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| JANTXV2N7236U | Виробник : MICROSEMI |
 2N7236UJANTXV 2N7236кількість в упаковці: 1 шт |
товару немає в наявності |
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| JANTXV2N7236U | Виробник : Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
товару немає в наявності |