Технічний опис MDS1100 Microsemi
Description: RF TRANS NPN 65V 1.03GHZ 55TU-1, Packaging: Bulk, Package / Case: 55TU-1, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 8.9dB, Power - Max: 8750W, Current - Collector (Ic) (Max): 100A, Voltage - Collector Emitter Breakdown (Max): 65V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V, Frequency - Transition: 1.03GHz, Supplier Device Package: 55TU-1, Part Status: Obsolete.
Інші пропозиції MDS1100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MDS1100 | Виробник : Microsemi Corporation |
 Description: RF TRANS NPN 65V 1.03GHZ 55TU-1Packaging: Bulk Package / Case: 55TU-1 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 8.9dB Power - Max: 8750W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 1.03GHz Supplier Device Package: 55TU-1 Part Status: Obsolete |
товару немає в наявності |
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| MDS1100 | Виробник : Microchip Technology |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
товару немає в наявності |