Технічний опис MDS150 MICROSEMI
Description: RF TRANS NPN 60V 1.09GHZ 55AW, Packaging: Bulk, Package / Case: 55AW, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 10dB, Power - Max: 350W, Current - Collector (Ic) (Max): 4A, Voltage - Collector Emitter Breakdown (Max): 60V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Frequency - Transition: 1.03GHz ~ 1.09GHz, Supplier Device Package: 55AW, Part Status: Obsolete.
Інші пропозиції MDS150
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MDS150 | Виробник : Microsemi Corporation |
 Description: RF TRANS NPN 60V 1.09GHZ 55AWPackaging: Bulk Package / Case: 55AW Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10dB Power - Max: 350W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Frequency - Transition: 1.03GHz ~ 1.09GHz Supplier Device Package: 55AW Part Status: Obsolete |
товар відсутній |
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| MDS150 | Виробник : Microchip Technology |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
товар відсутній |