Технічний опис MJE181
Description: TRANS NPN 60V 3A TO126, Power - Max: 12.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: TO-126, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Інші пропозиції MJE181
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
MJE181 | onsemi |
Description: TRANS NPN 60V 3A TO126Power - Max: 12.5 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-126 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE181 | Diodes Incorporated |
Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. | |
|
|
MJE181 | onsemi |
Bipolar Transistors - BJT 3A 60V 12.5W NPN |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE181 |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN 60V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MJE181 |
![]() |
Виробник: Diodes Incorporated
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.



