MRF581 Advanced Semiconductor, Inc.

Description: RF TRANS NPN 18V 5GHZ MICRO X, Supplier Device Package: Micro-X ceramic (84C), Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 18V, Current - Collector (Ic) (Max): 200mA, Power - Max: 1.25W, Gain: 13dB ~ 15.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: Micro-X ceramic (84C), Packaging: Bulk.