MRF581 Advanced Semiconductor, Inc.
| Кількість | Ціна |
|---|---|
| 1+ | 596.16 грн |
| 10+ | 504.16 грн |
| 25+ | 396.82 грн |
| 100+ | 365.10 грн |
| 250+ | 343.25 грн |
| 500+ | 322.11 грн |
| 1000+ | 288.98 грн |
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Технічний опис MRF581 Advanced Semiconductor, Inc.
Description: RF TRANS NPN 18V 5GHZ MICRO X, Supplier Device Package: Micro-X ceramic (84C), Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 18V, Current - Collector (Ic) (Max): 200mA, Power - Max: 1.25W, Gain: 13dB ~ 15.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: Micro-X ceramic (84C), Packaging: Bulk.