Технічний опис MRF581A Advanced Semiconductor, Inc.
Description: RF TRANS NPN 15V 5GHZ MICRO-X, Packaging: Bulk, Package / Case: Micro-X ceramic (84C), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB ~ 15.5dB, Power - Max: 1.25W, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Supplier Device Package: Micro-X ceramic (84C), Part Status: Obsolete.
Інші пропозиції MRF581A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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MRF581A | Microsemi Corporation |
Description: RF TRANS NPN 15V 5GHZ MICRO-XPackaging: Bulk Package / Case: Micro-X ceramic (84C) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB ~ 15.5dB Power - Max: 1.25W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Supplier Device Package: Micro-X ceramic (84C) Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| MRF581A |
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Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.


