Технічний опис MS652S APT(GHZ)
Description: RF TRANS NPN 16V 512MHZ M123, Packaging: Bulk, Package / Case: M123, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 10dB, Power - Max: 25W, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 16V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V, Frequency - Transition: 450MHz ~ 512MHz, Supplier Device Package: M123, Part Status: Obsolete.
Інші пропозиції MS652S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MS652S | Виробник : Microsemi Corporation |
 Description: RF TRANS NPN 16V 512MHZ M123Packaging: Bulk Package / Case: M123 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10dB Power - Max: 25W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 16V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Frequency - Transition: 450MHz ~ 512MHz Supplier Device Package: M123 Part Status: Obsolete |
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