Технічний опис MSRT100160(A)D GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A, Current - Reverse Leakage @ Vr: 10 µA @ 1600 V.
Інші пропозиції MSRT100160(A)D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MSRT100160AD | GeneSiC Semiconductor |
 Description: DIODE MOD GP 1600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
d_SPL.jpg "MSRT100160(A)D") |
MSRT100160(A)D | GeneSiC Semiconductor |
Discrete Semiconductor Modules 1600V 100A Forward |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. |
| MSRT100160AD |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| MSRT100160(A)D |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 1600V 100A Forward
Discrete Semiconductor Modules 1600V 100A Forward
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.