MWI50-12A7T

MWI50-12A7T Littelfuse


6d7a3ee0-ad1c-4868-9f3d-fb452e2e91e8.pdf Виробник: Littelfuse
Trans IGBT Module N-CH 1200V 85A 350W 18-Pin E2
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Технічний опис MWI50-12A7T Littelfuse

Description: IGBT MODULE 1200V 85A 350W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E2, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.

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MWI50-12A7T Виробник : IXYS MWI50-12A7_MWI50-12A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MWI50-12A7T Виробник : IXYS MWI50-12A7_MWI50-12A7T.pdf Description: IGBT MODULE 1200V 85A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
MWI50-12A7T MWI50-12A7T Виробник : IXYS MWI50_12A7_MWI50_12A7T-3311879.pdf IGBT Modules 50 Amps 1200V
товар відсутній
MWI50-12A7T Виробник : IXYS MWI50-12A7_MWI50-12A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній