Технічний опис MXP120A045FL-GE3 Vishay Siliconix
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W, Technology: MaxSiC™; SiC, Mounting: THT, Case: TO247-4, Kind of package: tube, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 31A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 99mΩ, Pulsed drain current: 98A, Power dissipation: 91W, Gate charge: 75.6nC.
Інші пропозиції MXP120A045FL-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MXP120A045FL-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 31A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 99mΩ Pulsed drain current: 98A Power dissipation: 91W Gate charge: 75.6nC |
товару немає в наявності |
В кошику од. на суму грн. |
| MXP120A045FL-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
товару немає в наявності
В кошику
од. на суму грн.



