MXP120A045FL-GE3 Vishay Siliconix



Виробник: Vishay Siliconix
Description: SILICON CARBIDE MOSFET
Packaging: Tube
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Технічний опис MXP120A045FL-GE3 Vishay Siliconix

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W, Technology: MaxSiC™; SiC, Mounting: THT, Case: TO247-4, Kind of package: tube, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 31A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 99mΩ, Pulsed drain current: 98A, Power dissipation: 91W, Gate charge: 75.6nC.

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MXP120A045FL-GE3 VISHAY mxp120a045fl.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
товару немає в наявності
В кошику  од. на суму  грн.
MXP120A045FL-GE3 mxp120a045fl.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 98A; 91W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 99mΩ
Pulsed drain current: 98A
Power dissipation: 91W
Gate charge: 75.6nC
товару немає в наявності
В кошику  од. на суму  грн.