Технічний опис MXP120A250FL-GE3 Vishay Siliconix
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W, Kind of package: tube, Drain current: 6.7A, Pulsed drain current: 21A, Power dissipation: 22W, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: MaxSiC™; SiC, Type of transistor: N-MOSFET, Mounting: THT, Case: TO247-4, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 20.3nC, On-state resistance: 0.5Ω.
Інші пропозиції MXP120A250FL-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MXP120A250FL-GE3 | Виробник : Vishay Semiconductors | SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET |
товару немає в наявності |
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| MXP120A250FL-GE3 | Виробник : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Kind of package: tube Drain current: 6.7A Pulsed drain current: 21A Power dissipation: 22W Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: MaxSiC™; SiC Type of transistor: N-MOSFET Mounting: THT Case: TO247-4 Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 20.3nC On-state resistance: 0.5Ω |
товару немає в наявності |