NDS9952A ON Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 627+ | 56.34 грн |
| 1000+ | 51.96 грн |
Відгуки про товар
Написати відгук
Технічний опис NDS9952A ON Semiconductor
Description: MOSFET N/P-CH 30V 3.7A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції NDS9952A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NDS9952A | onsemi |
 Description: MOSFET N/P-CH 30V 3.7A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| NDS9952A | ONS/FAI |
Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
NDS9952A | Fairchild Semiconductor |
Description: MOSFET N/P-CH 30V 3.7A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NDS9952A | onsemi / Fairchild |
MOSFETs SO-8 N&P-CH ENHANCE |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NDS9952A | ONSEMI |
Description: ONSEMI - NDS9952A - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 3.7 A, 0.06 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 3.7 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: Komplementärer n- und p-Kanal Betriebswiderstand, Rds(on): 0.06 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.7 SVHC: No SVHC (25-Jun-2020) |
товару немає в наявності |
В кошику од. на суму грн. |
| NDS9952A |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V 3.7A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 3.7A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NDS9952A |
|
Виробник: Fairchild Semiconductor
Description: MOSFET N/P-CH 30V 3.7A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 30V 3.7A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| NDS9952A |
|
Виробник: onsemi / Fairchild
MOSFETs SO-8 N&P-CH ENHANCE
MOSFETs SO-8 N&P-CH ENHANCE
товару немає в наявності
В кошику
од. на суму грн.
| NDS9952A |
|
Виробник: ONSEMI
Description: ONSEMI - NDS9952A - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 3.7 A, 0.06 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 3.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: Komplementärer n- und p-Kanal
Betriebswiderstand, Rds(on): 0.06
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.7
SVHC: No SVHC (25-Jun-2020)
Description: ONSEMI - NDS9952A - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 3.7 A, 0.06 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 3.7
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: Komplementärer n- und p-Kanal
Betriebswiderstand, Rds(on): 0.06
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.7
SVHC: No SVHC (25-Jun-2020)
товару немає в наявності
В кошику
од. на суму грн.