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NGTB25N120IHLWG ON Semiconductor

Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

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Технічний опис NGTB25N120IHLWG ON Semiconductor

Description: IGBT 1200V 50A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: -/235ns, Switching Energy: 800µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 200 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.

Інші пропозиції NGTB25N120IHLWG

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	NGTB25N120IHLWG	Виробник : onsemi	Description: IGBT 1200V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: -/235ns Switching Energy: 800µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W	товар відсутній