Технічний опис NTB30N06LT4G
Description: MOSFET N-CH 60V 30A D2PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 88.2W (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: D2PAK.
Інші пропозиції NTB30N06LT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NTB30N06LT4G | Виробник : onsemi |
Description: MOSFET N-CH 60V 30A D2PAKVgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: D2PAK |
товару немає в наявності |

