Технічний опис NTB75N03RG
Description: MOSFET N-CH 25V 9.7A/75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D²PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції NTB75N03RG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NTB75N03RG | Виробник : onsemi |
Description: MOSFET N-CH 25V 9.7A/75A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D²PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |

