NTF3055L175T1
Виробник:
на замовлення 10000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис NTF3055L175T1
Description: MOSFET N-CH 60V 2A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: SOT-223 (TO-261), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції NTF3055L175T1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NTF3055L175T1 | onsemi |
Description: MOSFET N-CH 60V 2A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: SOT-223 (TO-261) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| NTF3055L175T1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.