NTLJD3119CTAG
Виробник: на замовлення 348 шт:
термін постачання 14-28 дні (днів)
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Технічний опис NTLJD3119CTAG
Description: MOSFET N/P-CH 20V 2.6A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 710mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2).
Інші пропозиції NTLJD3119CTAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTLJD3119CTAG | Виробник : ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R |
товар відсутній |
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| NTLJD3119CTAG | Виробник : ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R |
товар відсутній |
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NTLJD3119CTAG | Виробник : onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
товар відсутній |
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NTLJD3119CTAG | Виробник : onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
товар відсутній |