Продукція > NAVITAS SEMICONDUCTOR, INC. > NV6029

NV6029 Navitas Semiconductor, Inc.

Name: NV6029
Brand: Navitas Semiconductor, Inc.
SKU: 82771351-3
Price: 897.81 UAH
Availability: InStock

Виробник: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V

на замовлення 2848 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
1+	897.81 грн
10+	680.52 грн
25+	634.51 грн
100+	548.03 грн
250+	546.00 грн

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис NV6029 Navitas Semiconductor, Inc.

Description: GANFET DISCRETE 650V 50MOHM PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 24mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V.

Інші пропозиції NV6029

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	NV6029	Виробник : Navitas Semiconductor, Inc.	Description: GANFET DISCRETE 650V 50MOHM PQFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 24mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V	товару немає в наявності Підписка на надходження	В кошику од. на суму грн.