RM6N800IP Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO251
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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Технічний опис RM6N800IP Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO251, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 98W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Інші пропозиції RM6N800IP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RM6N800IP | Виробник : Rectron |
MOSFETs TO-251 MOSFET |
товару немає в наявності |