RM80N30LD Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 30V 80A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-252-2
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис RM80N30LD Rectron USA
Description: MOSFET N-CHANNEL 30V 80A TO252-2, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-252-2, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції RM80N30LD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RM80N30LD | Виробник : Rectron |
MOSFET D-PAK MOSFET |
товару немає в наявності |