RM8N650TI Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 31.7W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Відгуки про товар
Написати відгук
Технічний опис RM8N650TI Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO220F, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 31.7W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack.
Інші пропозиції RM8N650TI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| RM8N650TI | Виробник : Rectron |
 MOSFETs MOSFET TO-220F |
товару немає в наявності |