RN1114(T5L,F,T) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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Технічний опис RN1114(T5L,F,T) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 250 MHz, Power - Max: 100 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Cut Tape (CT).
Інші пропозиції RN1114(T5L,F,T)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RN1114(T5L,F,T) | Toshiba |
 Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO |
товару немає в наявності |
В кошику од. на суму грн. |
| RN1114(T5L,F,T) |
|
Виробник: Toshiba
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
товару немає в наявності
В кошику
од. на суму грн.