RN1114MFV,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 42+ | 7.31 грн |
| 100+ | 4.53 грн |
| 500+ | 3.09 грн |
| 1000+ | 2.72 грн |
| 2000+ | 2.40 грн |
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Технічний опис RN1114MFV,L3F Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Інші пропозиції RN1114MFV,L3F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RN1114MFV,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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RN1114MFV,L3F | Виробник : Toshiba |
Digital Transistors Bias Resistor Built-in Transistor |
товару немає в наявності |


