RN1131MFV(TL3,T) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 Only
Resistor - Base (R1): 100 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 40+ | 7.69 грн |
| 100+ | 4.79 грн |
| 500+ | 3.27 грн |
| 1000+ | 2.87 грн |
| 2000+ | 2.54 грн |
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Технічний опис RN1131MFV(TL3,T) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM, Resistors Included: R1 Only, Resistor - Base (R1): 100 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: VESM, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Інші пропозиції RN1131MFV(TL3,T)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
RN1131MFV(TL3,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Resistors Included: R1 Only Resistor - Base (R1): 100 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RN1131MFV(TL3,T) | Toshiba | Digital Transistors BRT NPN Single 100mA IC 50V VCEO |
товару немає в наявності |
В кошику од. на суму грн. |
| RN1131MFV(TL3,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 Only
Resistor - Base (R1): 100 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 Only
Resistor - Base (R1): 100 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| RN1131MFV(TL3,T) |
Виробник: Toshiba
Digital Transistors BRT NPN Single 100mA IC 50V VCEO
Digital Transistors BRT NPN Single 100mA IC 50V VCEO
товару немає в наявності
В кошику
од. на суму грн.