RN1703,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.01 грн |
| 23+ | 13.27 грн |
| 100+ | 6.49 грн |
| 500+ | 5.08 грн |
| 1000+ | 3.53 грн |
Відгуки про товар
Написати відгук
Технічний опис RN1703,LF Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH, Supplier Device Package: USV, Resistor - Emitter Base (R2): 22kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 5-TSSOP, SC-70-5, SOT-353, Packaging: Tape & Reel (TR).
