| Кількість | Ціна |
|---|---|
| 11+ | 32.49 грн |
| 12+ | 27.01 грн |
| 100+ | 17.51 грн |
| 500+ | 11.81 грн |
| 1000+ | 8.93 грн |
| 2000+ | 7.95 грн |
| 4000+ | 5.20 грн |
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Технічний опис RN1706JE(TE85L,F) Toshiba
Description: TRANS 2NPN PREBIAS 0.1W ESV, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Cut Tape (CT), Part Status: Active, Supplier Device Package: ESV, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).
Інші пропозиції RN1706JE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
RN1706JE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS 2NPN PREBIAS 0.1W ESVVce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |