RN1708JE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 14+ | 22.63 грн |
| 100+ | 12.80 грн |
| 500+ | 7.95 грн |
| 1000+ | 6.10 грн |
| 2000+ | 5.30 грн |
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Технічний опис RN1708JE(TE85L,F) Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4, Supplier Device Package: ESV, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Mounting Type: Surface Mount, Package / Case: SOT-553, Packaging: Tape & Reel (TR), Part Status: Active.
Інші пропозиції RN1708JE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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RN1708JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| RN1708JE(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.