RN1710JE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ESV
на замовлення 3863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.65 грн |
| 16+ | 19.16 грн |
| 100+ | 9.66 грн |
| 500+ | 7.39 грн |
| 1000+ | 5.48 грн |
| 2000+ | 4.61 грн |
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Технічний опис RN1710JE(TE85L,F) Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: ESV.
Інші пропозиції RN1710JE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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Ціна |
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RN1710JE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: ESV |
товару немає в наявності |
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RN1710JE(TE85L,F) | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased NPN x 2 BRT SOT-553 50V |
товару немає в наявності |