Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > RN1903,LF(CT

RN1903,LF(CT Toshiba Semiconductor and Storage

Name: RN1903,LF(CT
Brand: Toshiba Semiconductor and Storage
SKU: 4304347-3
Price: 11.52 UAH
Availability: InStock

Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6

на замовлення 50 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
16+	18.01 грн
25+	11.52 грн

Мінімальне замовлення: 16

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Технічний опис RN1903,LF(CT Toshiba Semiconductor and Storage

Description: TRANS 2NPN PREBIAS 0.2W US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.

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RN1903,LF(CT	Виробник : Toshiba Semiconductor and Storage	Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6	товар відсутній
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