RN1905FE,LXHF(CT Toshiba
Виробник: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=2.2kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-563)
Відгуки про товар
Написати відгук
Технічний опис RN1905FE,LXHF(CT Toshiba
Description: TRANS PREBIAS 2NPN 50V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN1905FE,LXHF(CT за ціною від 6.09 грн до 29.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1905FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
|
| RN1905FE,LXHF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.44 грн |
| 100+ | 10.94 грн |
| 500+ | 7.65 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.09 грн |