RN1907FE,LXHF(CT Toshiba
Виробник: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=10kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-563)
| Кількість | Ціна |
|---|---|
| 11+ | 30.36 грн |
| 18+ | 18.28 грн |
| 100+ | 10.06 грн |
| 500+ | 7.52 грн |
| 1000+ | 6.68 грн |
| 2000+ | 5.91 грн |
| 4000+ | 4.85 грн |
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Технічний опис RN1907FE,LXHF(CT Toshiba
Description: TRANS PREBIAS 2NPN 50V 100MA ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: ES6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN1907FE,LXHF(CT за ціною від 4.96 грн до 29.27 грн
| Фото | Назва | Виробник | Інформація |
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| RN1907FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| RN1907FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13065 шт: термін постачання 21-31 дні (днів) |
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