RN1961(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 14+ | 23.08 грн |
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Технічний опис RN1961(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6, Supplier Device Package: US6, Resistor - Emitter Base (R2): 4.7kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).
Інші пропозиції RN1961(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
RN1961(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Supplier Device Package: US6 Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
RN1961(TE85L,F) | Toshiba |
 Digital Transistors US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| RN1961(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
В кошику
од. на суму грн.
| RN1961(TE85L,F) |
|
Виробник: Toshiba
Digital Transistors US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
Digital Transistors US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
товару немає в наявності
В кошику
од. на суму грн.