Продукція > TOSHIBA > RN2107,LF(CT

RN2107,LF(CT Toshiba

Name: RN2107,LF(CT
Brand: Toshiba
SKU: 153670-4
Price: 363.22 UAH
Availability: BackOrder

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Виробник: Toshiba
Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin SSM T/R

товару немає в наявності

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Технічний опис RN2107,LF(CT Toshiba

Description: TRANS PREBIAS PNP 50V 0.1A SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SSM, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.

Інші пропозиції RN2107,LF(CT

Назва	Виробник	Інформація	Доступність	Ціна
RN2107,LF(CT	Виробник : Toshiba Semiconductor and Storage	Description: TRANS PREBIAS PNP 50V 0.1A SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2	товару немає в наявності	В кошику од. на суму грн.
RN2107,LF(CT	Виробник : Toshiba Semiconductor and Storage	Description: TRANS PREBIAS PNP 50V 0.1A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2	товару немає в наявності	В кошику од. на суму грн.
RN2107,LF(CT	Виробник : Toshiba	Digital Transistors Bias Resistor Built-in transistor	товару немає в наявності	В кошику од. на суму грн.