RN2309(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 2698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.94 грн |
| 41+ | 7.51 грн |
| 100+ | 5.03 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.21 грн |
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Технічний опис RN2309(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Supplier Device Package: SC-70, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms.
Інші пропозиції RN2309(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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Ціна |
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RN2309(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
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RN2309(TE85L,F) | Виробник : Toshiba |
Digital Transistors 100mA -50volts 3Pin 47K x 22Kohms |
товару немає в наявності |