RN2417,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.73 грн |
| 6000+ | 4.10 грн |
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Технічний опис RN2417,LXHF Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: S-Mini, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції RN2417,LXHF за ціною від 3.45 грн до 26.99 грн
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RN2417,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINI Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2417,LXHF | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=10kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346) |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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