RN2503(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMV
Part Status: Active
на замовлення 2688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.20 грн |
| 12+ | 27.28 грн |
| 100+ | 15.46 грн |
| 500+ | 9.61 грн |
| 1000+ | 7.37 грн |
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Технічний опис RN2503(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SMV, Part Status: Active.
Інші пропозиції RN2503(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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RN2503(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMV Part Status: Active |
товару немає в наявності |
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RN2503(TE85L,F) | Виробник : Toshiba |
Digital Transistors SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz |
товару немає в наявності |