RN2701JE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 3695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.58 грн |
| 12+ | 24.7 грн |
| 100+ | 14 грн |
| 500+ | 8.7 грн |
| 1000+ | 6.67 грн |
| 2000+ | 5.8 грн |
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Технічний опис RN2701JE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: ESV, Part Status: Active.
Інші пропозиції RN2701JE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RN2701JE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: ESV Part Status: Active |
товар відсутній |
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RN2701JE(TE85L,F) | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz |
товар відсутній |