RN2903,LXHF(CT Toshiba
Виробник: ToshibaDigital Transistors AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=22kOhm, R2=22kOhm, VCEO=-50V, IC=-0.1A (SOT-363)
на замовлення 5990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 21.01 грн |
| 27+ | 12.84 грн |
| 100+ | 5.28 грн |
| 1000+ | 4.61 грн |
| 3000+ | 4.17 грн |
| 9000+ | 3.57 грн |
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Технічний опис RN2903,LXHF(CT Toshiba
Description: TRANS PREBIAS 2PNP 50V 100MA US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції RN2903,LXHF(CT за ціною від 5.85 грн до 25.76 грн
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RN2903,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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RN2903,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |